Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
Identifieur interne : 000063 ( Chine/Analysis ); précédent : 000062; suivant : 000064Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
Auteurs : RBID : Pascal:13-0219751Descripteurs français
- Pascal (Inist)
- Transistor, Composé III-V, Effet Rashba, Couplage spin spin, Electronique spin, Calcul quantique, Système 2 dimensions, Polarisation spin, Effet champ électrique, Champ température, Couche épitaxique, Couche mince, Injection spin, Flexion, Nitrure d'indium, Tellurure de gallium, Liquide ionique, Electrode commande, Dépendance tension, Potentiel polarisation, InN, 8535, 8575, 8565, 8570E.
English descriptors
- KwdEn :
- Bending, Electric field effect, Epitaxial film, Gallium tellurides, Gates, III-V compound, Indium nitride, Ionic liquid, JJ coupling, Polarization potential, Quantum computation, Rashba effect, Spin injection, Spin polarization, Spintronics, Temperature distribution, Thin film, Transistor, Two dimensional system, Voltage dependence.
Abstract
Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000B57
- to stream Main, to step Repository: 000283
- to stream Chine, to step Extraction: 000063
Links to Exploration step
Pascal:13-0219751Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN</title><author><name>CHUNMING YIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name>HONGTAO YUAN</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo</s1><s2>Tokyo, 113-8656</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Tokyo, 113-8656</wicri:noRegion></affiliation></author><author><name>XINQIANG WANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name>SHITAO LIU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name>SHAN ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name>NING TANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name>FUJUN XU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name>ZHUOYU CHEN</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo</s1><s2>Tokyo, 113-8656</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Tokyo, 113-8656</wicri:noRegion></affiliation></author><author><name sortKey="Shimotani, Hidekazu" uniqKey="Shimotani H">Hidekazu Shimotani</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo</s1><s2>Tokyo, 113-8656</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Tokyo, 113-8656</wicri:noRegion></affiliation></author><author><name sortKey="Iwasa, Yoshihiro" uniqKey="Iwasa Y">Yoshihiro Iwasa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo</s1><s2>Tokyo, 113-8656</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Tokyo, 113-8656</wicri:noRegion></affiliation></author><author><name>YONGHAI CHEN</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS</s1><s2>Beijing, 100083</s2><s3>CHN</s3><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100083</wicri:noRegion></affiliation></author><author><name>WEIKUN GE</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, Tsinghua University</s1><s2>Beijing, 100084</s2><s3>CHN</s3><sZ>12 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100084</wicri:noRegion></affiliation></author><author><name>BO SHEN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0219751</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0219751 INIST</idno><idno type="RBID">Pascal:13-0219751</idno><idno type="wicri:Area/Main/Corpus">000B57</idno><idno type="wicri:Area/Main/Repository">000283</idno><idno type="wicri:Area/Chine/Extraction">000063</idno></publicationStmt><seriesStmt><idno type="ISSN">1530-6984</idno><title level="j" type="abbreviated">Nano lett. : (Print)</title><title level="j" type="main">Nano letters : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bending</term><term>Electric field effect</term><term>Epitaxial film</term><term>Gallium tellurides</term><term>Gates</term><term>III-V compound</term><term>Indium nitride</term><term>Ionic liquid</term><term>JJ coupling</term><term>Polarization potential</term><term>Quantum computation</term><term>Rashba effect</term><term>Spin injection</term><term>Spin polarization</term><term>Spintronics</term><term>Temperature distribution</term><term>Thin film</term><term>Transistor</term><term>Two dimensional system</term><term>Voltage dependence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transistor</term><term>Composé III-V</term><term>Effet Rashba</term><term>Couplage spin spin</term><term>Electronique spin</term><term>Calcul quantique</term><term>Système 2 dimensions</term><term>Polarisation spin</term><term>Effet champ électrique</term><term>Champ température</term><term>Couche épitaxique</term><term>Couche mince</term><term>Injection spin</term><term>Flexion</term><term>Nitrure d'indium</term><term>Tellurure de gallium</term><term>Liquide ionique</term><term>Electrode commande</term><term>Dépendance tension</term><term>Potentiel polarisation</term><term>InN</term><term>8535</term><term>8575</term><term>8565</term><term>8570E</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0></fA01><fA03 i2="1"><s0>Nano lett. : (Print)</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN</s1></fA08><fA11 i1="01" i2="1"><s1>CHUNMING YIN</s1></fA11><fA11 i1="02" i2="1"><s1>HONGTAO YUAN</s1></fA11><fA11 i1="03" i2="1"><s1>XINQIANG WANG</s1></fA11><fA11 i1="04" i2="1"><s1>SHITAO LIU</s1></fA11><fA11 i1="05" i2="1"><s1>SHAN ZHANG</s1></fA11><fA11 i1="06" i2="1"><s1>NING TANG</s1></fA11><fA11 i1="07" i2="1"><s1>FUJUN XU</s1></fA11><fA11 i1="08" i2="1"><s1>ZHUOYU CHEN</s1></fA11><fA11 i1="09" i2="1"><s1>SHIMOTANI (Hidekazu)</s1></fA11><fA11 i1="10" i2="1"><s1>IWASA (Yoshihiro)</s1></fA11><fA11 i1="11" i2="1"><s1>YONGHAI CHEN</s1></fA11><fA11 i1="12" i2="1"><s1>WEIKUN GE</s1></fA11><fA11 i1="13" i2="1"><s1>BO SHEN</s1></fA11><fA14 i1="01"><s1>State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="02"><s1>Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo</s1><s2>Tokyo, 113-8656</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS</s1><s2>Beijing, 100083</s2><s3>CHN</s3><sZ>11 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Physics, Tsinghua University</s1><s2>Beijing, 100084</s2><s3>CHN</s3><sZ>12 aut.</sZ></fA14><fA20><s1>2024-2029</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27369</s2><s5>354000503816320240</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>32 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0219751</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F12</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Transistor</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Transistor</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Transistor</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Effet Rashba</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Rashba effect</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Couplage spin spin</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>JJ coupling</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Acoplamiento spin spin</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Electronique spin</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Spintronics</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Electrónica de espin</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Calcul quantique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Quantum computation</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Calculo cuántico</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Système 2 dimensions</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Two dimensional system</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Sistema 2 dimensiones</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Polarisation spin</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Spin polarization</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Polarización spin</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Effet champ électrique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Electric field effect</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Efecto campo eléctrico</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Champ température</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Temperature distribution</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Campo temperatura</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Couche épitaxique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Epitaxial film</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Capa epitáxica</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Couche mince</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Thin film</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Capa fina</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Injection spin</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Spin injection</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Flexion</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Bending</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Flexión</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Tellurure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gallium tellurides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Liquide ionique</s0><s5>29</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Ionic liquid</s0><s5>29</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Líquido iónico</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Electrode commande</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Gates</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Dépendance tension</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Voltage dependence</s0><s5>31</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Potentiel polarisation</s0><s5>32</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Polarization potential</s0><s5>32</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Potencial polarización</s0><s5>32</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>InN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>8535</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>8575</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>8565</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>8570E</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>203</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000063 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 000063 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Chine
|étape= Analysis
|type= RBID
|clé= Pascal:13-0219751
|texte= Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
}}
| This area was generated with Dilib version V0.5.77. |  |